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 3N171 N-CHANNEL MOSFET
The 3N171 is an enhancement mode N-Channel Mosfet
The 3N171 is an enhancement mode N-Channel Mosfet designed for use as a General Purpose amplifier or switch The hermetically sealed TO-72 package is well suited for high reliability and harsh environment applications. (See Packaging Information). FEATURES DIRECTREPLACEMENTFORINTERSIL3N171 LOWDRAINTOSOURCERESISTANCE FASTSWITCHING ABSOLUTEMAXIMUMRATINGS(Note1) @25C(unlessotherwisenoted) rDS(on)200 td(on)3.0ns
MaximumTemperatures StorageTemperature OperatingJunctionTemperature 3N171 Features: MaximumPowerDissipation ContinuousPowerDissipation Low ON Resistance MAXIMUMCURRENT Low Capacitance DraintoSource High Gain MAXIMUMVOLTAGES High Gate Breakdown Voltage DraintoGate Low Threshold Voltage DraintoSource PeakGatetoSource 3N171ELECTRICALCHARACTERISTICS@25C(unlessotherwisenoted) SYMBOL CHARACTERISTIC MIN TYP. MAX UNITS BVDSS DraintoSourceBreakdownVoltage 25 V VDS(on) DraintoSource"On"Voltage 2.0 VGS(th) GatetoSourceThresholdVoltage 1.5 2.0 IGSS GateLeakageCurrent 10 pA IDSS DrainLeakageCurrent"Off" 10 nA ID(on) DrainCurrent"On" 10 mA gfs ForwardTransconductance 1000 S rDS(on) DraintoSource"On"Resistance 200
65Cto+150C 55Cto+135C 300mW 30mA 35V 25V 35V CONDITIONS ID=10A,VGS=0V ID=10mA,VGS=10V VDS=10V,ID=10A VGS=35V,VDS=0V VGS=10V,VDS=10V VGS=10V,VDS=10V VDS=10V,ID=2mA,f=1kHz VGS=10V,ID=0A,f=1kHz
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Crss ReverseTransferCapacitance 1.3 VDS=0V,VGS=0V,f=1MHz pF Ciss InputCapacitance 5 VDS=10V,VGS=0V,f=1MHz Cdb DraintoBodyCapacitance 5.0 VDB=10V,f=1MHz SWITCHINGCHARACTERISTICS SYMBOL CHARACTERISTIC MAX UNITS CONDITIONS td(on) TurnOnDelayTime 3 ns VDD=10V,ID(on)=10mA,VGS(on)=10V,VGS(off)=0V,RG=50 tr TurnOnRiseTime 10 td(off) TurnOffDelayTime 3 tf TurnOffFallTime 15
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Available Packages: 3N171 in TO-72 3N171 in bare die. TO-72 (Bottom View)
Note1Absolutemaximumratingsarelimitingvaluesabovewhich3N171 serviceabilitymaybeimpaired.
Micross Components Europe
Tel: +44 1603 788967 Email: chipcomponents@micross.com Web: http://www.micross.com/distribution
Please contact Micross for full package and die dimensions
* Body tied to case
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.
Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603788920, Email: chipcomponents@micross.com Web: www.micross.com/distribution.aspx


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